Remarks on the tight-binding model of graphene

We address a simple but fundamental issue arising in the study of graphene, as well as of other systems that have a crystalline structure with more than one atom per unit cell. For these systems, the choice of the tight-binding basis is not unique. For monolayer graphene two bases are widely used in the literature. While the expectation values of operators describing physical quantities should be independent of basis, the form of the operators may depend on the basis, especially in the presence of disorder or of an applied magnetic field. Using the inappropriate form of certain operators may lead to erroneous physical predictions. We discuss the two bases used to describe monolayer graphene, as well as the form of the most commonly used operators in the two bases. We repeat our analysis for the case of bilayer graphene.Comment: 15 pages, 4 figure

Tunable Nb Superconducting Resonator Based on a Constriction Nano- SQUID Fabricated with a Ne Focused Ion Beam

Hybrid superconducting-spin systems offer the potential to combine highly coherent atomic quantum systems with the scalability of superconducting circuits. To fully exploit this potential requires a high-quality-factor microwave resonator, tunable in frequency and able to operate at magnetic fields optimal for the spin system. Such magnetic fields typically rule out conventional Al -based Josephson-junction devices that have previously been used for tunable high- Q microwave resonators. The larger critical field of Nb allows microwave resonators with large field resilience to be fabricated. Here we demonstrate how constriction-type weak links, patterned in parallel into the central conductor of a Nb coplanar resonator with a neon focused ion beam, can be used to implement a frequency-tunable resonator. We study transmission through two such devices and show how they realize high-quality-factor, tunable, field-resilient devices that hold promise for future applications coupling to spin system

Strain-gradient position mapping of semiconductor quantum dots

COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESWe introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from +/- 35 nm down to +/- 1 nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.1181116COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESCOORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPES88887.059630/2014-00The authors wish to thank E. Gautier for the FIB cut and images. Sample fabrication was carried out in the Upstream Nanofabrication Facility (PTA) and CEA LETI MINATEC/DOPT clean rooms. P.-L. de Assis was financially supported by Agence Nationale de la Recherche (Project No. ANR-11-BS10-011) and CAPES Young Talents Fellowship Grant No. 88887.059630/2014-00, and D. Tumanov by a doctoral scholarship from the Rhône-Alpes Region

Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor

We report the dispersive readout of the spin state of a double quantum dot formed at the corner states of a silicon nanowire field-effect transistor. Two face-to-face top-gate electrodes allow us to independently tune the charge occupation of the quantum dot system down to the few-electron limit. We measure the charge stability of the double quantum dot in DC transport as well as dispersively via in-situ gate-based radio frequency reflectometry, where one top-gate electrode is connected to a resonator. The latter removes the need for external charge sensors in quantum computing architectures and provides a compact way to readout the dispersive shift caused by changes in the quantum capacitance during interdot charge transitions. Here, we observe Pauli spin-blockade in the high-frequency response of the circuit at finite magnetic fields between singlet and triplet states. The blockade is lifted at higher magnetic fields when intra-dot triplet states become the ground state configuration. A lineshape analysis of the dispersive phase shift reveals furthermore an intradot valley-orbit splitting $\Delta_{vo}$ of 145 $\mu$eV. Our results open up the possibility to operate compact CMOS technology as a singlet-triplet qubit and make split-gate silicon nanowire architectures an ideal candidate for the study of spin dynamics

Superconducting Nanocircuits for Topologically Protected Qubits

For successful realization of a quantum computer, its building blocks (qubits) should be simultaneously scalable and sufficiently protected from environmental noise. Recently, a novel approach to the protection of superconducting qubits has been proposed. The idea is to prevent errors at the "hardware" level, by building a fault-free (topologically protected) logical qubit from "faulty" physical qubits with properly engineered interactions between them. It has been predicted that the decoupling of a protected logical qubit from local noises would grow exponentially with the number of physical qubits. Here we report on the proof-of-concept experiments with a prototype device which consists of twelve physical qubits made of nanoscale Josephson junctions. We observed that due to properly tuned quantum fluctuations, this qubit is protected against magnetic flux variations well beyond linear order, in agreement with theoretical predictions. These results demonstrate the feasibility of topologically protected superconducting qubits.Comment: 25 pages, 5 figure

Bound states at impurities in a two-dimensional metal

We present an experimental study of the local electronic properties of atomic-size impurities in an \chem{ErSi_{2}} layer grown on the Si(111) surface, which behaves as a quasi–two-dimensional (2D) metal. From scanning tunneling spectroscopy measurements at $T = 45$\un{K}, we show that the silicide 2D state probed on defect-free areas becomes localized at impurities. For two different silicide point-defects, a resonance is found in the conductance spectra, at voltages above the 2D state band edge. This resonance is interpreted as a bound state within a repulsive impurity potential model. Spectroscopy on additional extra-impurities obtained after Co deposition is also reported

Confinement of Bloch waves in

Two-dimensional \chem{YSi_2} or \chem{ErSi_2} layers on \chem{Si(111)} surface present two surface states in the vicinity of the Fermi level and form a two-dimensional surface electron gas. We have performed density functional theory (DFT) calculations of a realistic one-dimensional nanostructure of \chem{YSi_2} on \chem{Si(111)} to study confinement effects of this electron gas. The calculated square modulus of the wave function shows complex modulations related to the quantum interference patterns observed by scanning tunneling microscopy (STM). For each quantised state, the modulation involves at least three components consistent with the scattering of Bloch waves. A Fourier analysis of the real space modulations is used to construct the surface states dispersion curves. They are compared to the direct calculation of the ideal \chem{YSi_2/Si(111)} surface electronic structure and to the $E(k)$ curves deduced from conductance images in STM experiments

Strain-Gradient Position Mapping of Semiconductor Quantum Dots

International audienceIn the context of fast developing quantum technologies, locating single quantum objects embedded in solid or fluid environment while keeping their properties unchanged is a crucial requirement as well as a challenge. Such ``quantum microscopes'' have been demonstrated already for NV-centers embedded in diamond [1], and for single atoms within an ultracold gas [2]. In this work, we demonstrate a new method to determine non-destructively the position of randomly distributed semiconductor quantum dots (QDs) deeply embedded in a solid photonic waveguide. By setting the wire in an oscillating motion, we generate large stress gradients across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress [3-5] to infer their positions with an accuracy ranging from +/- 35 nm down to +/-1 nm for close-to-axis QDs